Type

Text

Type

Thesis

Date

2008-05-01

Keywords

bulk currents | surface currents | GaSb

Language

en_US

Source

This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.

Identifier

http://hdl.handle.net/11401/70830

Publisher

The Graduate School, Stony Brook University: Stony Brook, NY.

Format

application/pdf

Abstract

Bulk and surface currents limiting the performance of GaSb based semiconductor devices were studied. In thermophovoltaic applications recombination currents limit the open circuit voltage. The first section of this work dealt with the study of carrier recombination in InGaAsSb epitaxial layers for thermophotovoltaic applications. Minority carrier lifetimes of p-type InGaAsSb lattice matched to GaSb were studied using Time Resolved Photoluminescence. The temperature dependence of lifetimes of the samples differed from the expected T1.5 model and this variation was explained by the absorption tail below band gap and the temperature dependence of photon recycling. The values of radiative recombination coefficient B and Auger coefficient C were calculated. Radiative and non radiative lifetimes were separated and radiative efficiency was found to be 67 %. iii The second section of the work dealt with the reduction of surface currents by passivation of GaSb based Schottky diodes using micromachining and pulsed anodization technique. Surface currents in untreated Schottky diodes fabricated by photolithography and micromachining were compared. It was found that micromachining does not damage the surface and that devices fabricated by micromachining had lower surface currents when compared to devices fabricated from conventional processing. Passivation by pulsed anodization resulted in the reduction of the surface current by 10-11times.

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