Type
Text
Type
Thesis
Advisor
Raghothamachar, Balaji | Dudley, Michael | Venkatesh, T.A..
Date
2016-12-01
Keywords
Materials Science | HRXRD, semiconductor, x-ray topography
Department
Department of Materials Science and Engineering
Language
en_US
Source
This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.
Identifier
http://hdl.handle.net/11401/76268
Publisher
The Graduate School, Stony Brook University: Stony Brook, NY.
Format
application/pdf
Abstract
Silicon carbide is a promising semiconductor material with more preferable properties than the traditional materials like silicon dioxide and gallium arsenide. With large band-gap, high breakdown voltage, high thermal conductivity and good resistance in radiation environment, SiC is widely used in electronic devices especially under high frequency, high voltage and high temperature. Despite of its good properties, the application of SiC is limited by the growth of high quality single crystal boule, namely, the defects inside the SiC crystals have deleterious effects on the performance of devices made of it. In this thesis, the combination of techniques including Synchrotron White Beam X-ray Topography, Monochromatic X-ray Topography and Nomarski Optical Microscopy is used, and the distribution of dislocations including Basal Plane Dislocations, Threading Edge Dislocations and Threading Screw Dislocations are measured and other defects like Stacking Fault, Low Angle Grain Boundary and V-shape are also characterized. Due to the wide band-gap and high efficiency of emitting light, gallium nitride is widely used in LED industry. Similar with silicon carbide, gallium nitride crystal also suffers from the defects inside the crystals. In this thesis, High Resolution of X-ray Diffraction is used to measure the rocking curve of the crystal, and software HXRD is used to simulated the rocking curve of perfect crystal. And the Full Width Half Maximum is calculated to evaluate the overall quality of the crystal. | 73 pages
Recommended Citation
Yang, Xiaolin, "Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting Applications" (2016). Stony Brook Theses and Dissertations Collection, 2006-2020 (closed to submissions). 2196.
https://commons.library.stonybrook.edu/stony-brook-theses-and-dissertations-collection/2196