Type
Text
Type
Thesis
Advisor
Dudley, Michael | Venkatesh, T. A.. | Raghothamachar, Balaji
Date
2012-12-01
Keywords
dislocations, sapphire, X-ray Topography | Materials Science
Department
Department of Materials Science and Engineering.
Language
en_US
Source
This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.
Identifier
http://hdl.handle.net/11401/76365
Publisher
The Graduate School, Stony Brook University: Stony Brook, NY.
Format
application/pdf
Abstract
Defects would effect the optical properties and operation performances of sapphire single crystal material. Further understanding the defects structure and origins in sapphire plays a crucial role. This study is focusing on analyzing the structure of linear, 2D and 3D defects using the X-ray topography technique. Several other techniques such as etch pits method and X-ray reticulography are also employed to revealing the properties of dislocations and stress distribution around certain defect feature. | 62 pages
Recommended Citation
Yang, Yu, "Characterizations of Defects in Bulk Sapphire" (2012). Stony Brook Theses and Dissertations Collection, 2006-2020 (closed to submissions). 2289.
https://commons.library.stonybrook.edu/stony-brook-theses-and-dissertations-collection/2289