Type
Text
Type
Thesis
Advisor
Dudley, Micheal | Raghothamachar, Balaji | Venkatesh, T.A..
Date
2013-12-01
Keywords
Materials Science
Department
Department of Materials Science and Engineering.
Language
en_US
Source
This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.
Identifier
http://hdl.handle.net/11401/76352
Publisher
The Graduate School, Stony Brook University: Stony Brook, NY.
Format
application/pdf
Abstract
In semiconductor technology for solar applications, the demand for high level of structural perfection in single crystal silicon has increased. The defects in the crystals can affect the efficiency of solar cells, so the study of imperfections is important for providing feedback to develop high quality crystal. X-ray topography is a nondestructive method and a powerful tool to evaluate crystals for technological applications, growth and processing. In this study, defects in homoepitaxial silicon epilayers grown by chemical vapor deposition (CVD) for solar cell application with the dislocation density of 9.4×〖 10〗 ^3cm-2 have been mapped and characterized by synchrotron white beam X-ray topography (SWBXT), synchrotron monochromated beam X-ray topography, high resolution X-ray diffraction and optical microscopy. In free standing 200µm thick epitaxial single crystal silicon detached from the silicon substrate, a crisscross network of screw dislocations, misfit dislocations and multiple stacking fault configurations are revealed and quantitatively characterized. The silicon epitaxial layer (~60µm) attached to the silicon substrate is characterized by threading dislocations, misfit dislocations and a non-uniform distribution of bending stains from mismatch. These defects can impact the performance and yield of this CVD process for solar cell manufacturing. | In semiconductor technology for solar applications, the demand for high level of structural perfection in single crystal silicon has increased. The defects in the crystals can affect the efficiency of solar cells, so the study of imperfections is important for providing feedback to develop high quality crystal. X-ray topography is a nondestructive method and a powerful tool to evaluate crystals for technological applications, growth and processing. In this study, defects in homoepitaxial silicon epilayers grown by chemical vapor deposition (CVD) for solar cell application with the dislocation density of 9.4×〖 10〗 ^3cm-2 have been mapped and characterized by synchrotron white beam X-ray topography (SWBXT), synchrotron monochromated beam X-ray topography, high resolution X-ray diffraction and optical microscopy. In free standing 200µm thick epitaxial single crystal silicon detached from the silicon substrate, a crisscross network of screw dislocations, misfit dislocations and multiple stacking fault configurations are revealed and quantitatively characterized. The silicon epitaxial layer (~60µm) attached to the silicon substrate is characterized by threading dislocations, misfit dislocations and a non-uniform distribution of bending stains from mismatch. These defects can impact the performance and yield of this CVD process for solar cell manufacturing. | 47 pages
Recommended Citation
Wang, Hao, "Characterization of Defects in Single Crystal Epitaxial Silicon for Solar cells" (2013). Stony Brook Theses and Dissertations Collection, 2006-2020 (closed to submissions). 2276.
https://commons.library.stonybrook.edu/stony-brook-theses-and-dissertations-collection/2276