Type
Text
Type
Thesis
Advisor
Meng, Yizhi | Lu, Ming | Venkatesh, T. A..
Date
2013-12-01
Keywords
atomic layer deposition, plasma etch resistance, sequential infiltration synthesis | Materials Science
Department
Department of Materials Science and Engineering.
Language
en_US
Source
This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.
Identifier
http://hdl.handle.net/11401/76333
Publisher
The Graduate School, Stony Brook University: Stony Brook, NY.
Format
application/pdf
Abstract
Deep etch is always a challenge in semiconductor industry due to the requirement of high selectivity and fidelity for the process. Atomic layer deposition (ALD) is a new thin film deposition technique which is self-limiting and provides excellent conformality and reproducibility. Other than the application of deposition, ALD also provides an approach which operates at semi-static mode to modify the characteristic of the bulk of resist, which will render a high resistance to plasma etch as well as sidewall protection. In this research, etching resistance of two types of e-beam resists and two types of photoresists is treated by sequential infiltration synthesis (SIS). Resist patterns are sequentially exposed to trimethyl aluminum (TMA) precursor and water vapor which form alumina in the bulk, providing a high resistance under several plasma etching processes. A specially designed sample architecture is used to characterize the etching properties. During the infiltration process, the top surface of resist is cover with germanium to prevent diffusion, which presents alumina density variation on vertical direction. By observing the cross section profile after etching, the infiltration property can be analyzed. The resistance of S1811, ma-N 1410, PMMA are greatly enhanced, that of ZEP520 is also slightly improved. A hypothesis about the principle of SIS is proposed that the bond may become saturated within the first cycle of SIS, which blocks the following diffusion of gaseous precursors. | 69 pages
Recommended Citation
Meng, Xianghai, "Study on improvement of plasma etch resistance of photo resists and e-beam resists by sequential infiltration synthesis" (2013). Stony Brook Theses and Dissertations Collection, 2006-2020 (closed to submissions). 2257.
https://commons.library.stonybrook.edu/stony-brook-theses-and-dissertations-collection/2257